2N5830 Transistor


Price:
Sale price£2.00

Description

2N5830

  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation (Pc): 0.625 W
  • Maximum Collector-Base Voltage |Vcb|: 120 V
  • Maximum Collector-Emitter Voltage |Vce|: 100 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 0.6 A
  • Max. Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 100 MHz
  • Collector Capacitance (Cc): 4 pF
  • Forward Current Transfer Ratio (hFE), MIN: 80
  • Noise Figure, dB: -
  • Package: TO92

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