2N4916 Transistor

Sale price£2.00



  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 0.2 W
  • Maximum Collector-Base Voltage |Vcb|: 30 V
  • Maximum Collector-Emitter Voltage |Vce|: 30 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 0.1 A
  • Max. Operating Junction Temperature (Tj): 125 °C
  • Transition Frequency (ft): 400 MHz
  • Collector Capacitance (Cc): 5 pF
  • Forward Current Transfer Ratio (hFE), MIN: 70
  • Noise Figure, dB: -
  • Package: TO106

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